Work

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

Year: 2015

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4918530

Authors: Byung-Jae Kim, Ya-Hsi Hwang, Shihyun Ahn, Weidi Zhu, Chen Dong, Liu Lu, Fan Ren, M. R. Holzworth, Kevin S. Jones, Stephen J. Pearton, David J. Smith, Jihyun Kim, Ming-Lan Zhang

Institutions: University of Florida, Arizona State University, Korea University, Hebei University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Defense

Awards: G5008918744, EAGER: Novel high electron mobility transistor designs

OpenAlex ID: W2003961359

FWCI: 0.445

Cites: 13

Cited by: 4

Related to: 10