Work

Some effects of oxygen impurities on AlN and GaN

Year: 2002

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(02)01753-0

Authors: Glen A. Slack, Leo J. Schowalter, Donald Morelli, Jaime A. Freitas

Institutions: Rensselaer Polytechnic Institute, Aptiv (United States), United States Naval Research Laboratory

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2004157914

FWCI: 8.745

Cites: 56

Cited by: 417

Related to: 10