Year: 2006
Type: article
Abstract: A series of PbTe/PbEuTe double barrier samples with different barrier widths were successfully grown on BaF2 substrates by molecular beam epitaxy. The electron concentration of PbTe spacer and well layers was controlled by the deviation from stoichiometry, while the buffer and cap layers were intentionally doped with bismuth to obtain low-resistivity layers to be used as top and bottom contacts. Assuming 50% of band offset, a barrier height of 150 meV was determined by infrared transmission measurements, corresponding to a PbEuTe barrier with 5% of europium content. The structural parameters of the samples were accurately determined by combining the measurement in a high-resolution x-ray diffractometer in the triple-axis configuration with a simulation within the framework of dynamical theory of diffraction.
Source: Brazilian Journal of Physics
Authors: A. M. P. dos Anjos, E. Abramof, P. H. O. Rappl
Institution: Instituto Nacional de Pesquisas Espaciais
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,290
OpenAlex ID: W2004699600