Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm
Year: 2007
Type: article
Source: Journal of Crystal Growth
Institutions: Technical University of Munich, Vertilas (Germany)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2005010446
