Year: 2014
Type: article
Abstract: The high carrier mobility in graphene promises its utility in electronics applications. Azobenzene is a widely studied organic molecule for switchable optoelectronic devices that can be synthesized with a wide variety of ligands and deposited on graphene. Using first-principles calculations, we investigate graphene doping by physisorbed azobenzene molecules with various electron-donating and -accepting ligands. We confirm previous experimental results that demonstrate greater $p$ doping of graphene for the $\mathit{trans}$ compared to $\mathit{cis}$ configuration when using a ${\mathrm{SO}}_{3}$ electron-accepting ligand; however, we find that ${\mathrm{NO}}_{2}$ ligands maximize the $p$-doping difference between isomers. We also examine how these doping effects change when the graphene monolayer is supported on a silica substrate. We then extend these findings by examining the doping effects of an applied electrical bias and mechanical strain to the graphene, which lead to changes in doping for both the $\mathit{trans}$ and $\mathit{cis}$ isomers. These results demonstrate a different type of multicontrol device combining light, electric field, and strain to change carrier concentration in graphene.
Source: Physical Review B
Authors: J. P. Trinastic, Hai-Ping Cheng
Institution: University of Florida
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funder: Basic Energy Sciences
Award: G396348594
OpenAlex ID: W2005027950