Work

Experimental demonstration of a ferroelectric FET using paper substrate

Year: 2014

Type: article

Abstract: A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ∼20 V for the transistor on paper. An on/off current ratio of ∼102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

Source: IEICE Electronics Express

DOI: 10.1587/elex.11.20140447

Authors: Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun-Ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park

Institutions: University of Seoul, Tokyo Institute of Technology, Auburn University, Konkuk University, Brown University, National NanoFab Center, Korean Association Of Science and Technology Studies, Korea Institute of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funder: University of Seoul

OpenAlex ID: W2005438897

FWCI: 0.883

Cites: 4

Cited by: 6

Related to: 10