OpenAlex | Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

Work

Year: 2009

Type: article

Source: Electrochemical and Solid-State Letters

Authors Hyun-Sik Seo, Jong Uk Bae, Dae‐Hwan Kim, YuJin Park, Chang-Dong Kim +4 more

Institution Yonsei University

Cites: 11

Cited by: 57

Related to: 10

FWCI: 4.808

Citation percentile (by year/subfield): 94.1

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Sustainable Development Goal Clean water and sanitation

Open Access status: closed