Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields
Year: 1997
Type: article
Abstract: Through the use of relations analogous to that of the Rayleigh law, it is demonstrated that the ac electric field dependence of the permittivity of ferroelectric thin films can be described. It is further shown that both reversible and irreversible components of the permittivity decrease linearly with the logarithm of the frequency of the ac field. The results demonstrate that the models describing the interaction of domain walls and randomly distributed pinning centers in magnetic materials can be extended to the displacement of domain walls in ferroelectric thin films.
Source: Journal of Applied Physics
DOI: 10.1063/1.366006
Authors: D. V. Taylor, D. Damjanovic
Institution: École Polytechnique Fédérale de Lausanne
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2006279542