Work

van der Waals Heterostructure of Phosphorene and Graphene: Tuning the Schottky Barrier and Doping by Electrostatic Gating

Year: 2015

Type: article

Abstract: In this Letter, we study the structural and electronic properties of single-layer and bilayer phosphorene with graphene. We show that both the properties of graphene and phosphorene are preserved in the composed heterostructure. We also show that via the application of a perpendicular electric field, it is possible to tune the position of the band structure of phosphorene with respect to that of graphene. This leads to control of the Schottky barrier height and doping of phosphorene, which are important features in the design of new devices based on van der Waals heterostructures.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.114.066803

Authors: J. E. Padilha, A. Fazzio, Antônio J. R. da Silva

Institutions: Universidade de São Paulo, Brazilian Synchrotron Light Laboratory

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2006409943

FWCI: 22.78

Cites: 45

Cited by: 517

Related to: 10