Year: 2008
Type: article
Abstract: Spin precession and dephasing (“Hanle effect”) provide an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, illustrating the nontrivial consequences of employing oblique magnetic fields (due to misalignment or intentional, fixed in-plane field components) to measure the effects of spin precession. Model results are also calculated for Hanle measurements under conditions of diffusion-dominated transport, revealing an expected Hanle peak-widening effect induced by the presence of fixed in-plane magnetic bias fields.
Source: Applied Physics Letters
DOI: 10.1063/1.2907497
Authors: Jing Li, Biqin Huang, Ian Appelbaum
Institution: University of Delaware
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2007499226