The effect of strain-induced band-gap narrowing on high concentration phosphorus diffusion in silicon
Year: 1979
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.326001
Author: Richard B. Fair
Institution: AT&T (United States)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2007570106