Work

Stamps for nanoimprint lithography by extreme ultraviolet interference lithography

Year: 2004

Type: article

Abstract: Extreme ultraviolet interference lithography (EUV-IL) was employed to fabricate large area stamps with patterns of sub-50nm half pitch for nanoimprint lithography (NIL). The resist patterns exposed by EUV-IL were transferred into underlying Si or SiO2∕Si substrates by reactive ion etching. With this method, NIL stamps with feature sizes as small as 25nm and patterned areas as large as 1×1mm2 were successfully produced. Using those stamps in NIL, the patterns with aspect ratio up to 2 were replicated with good replication fidelity. Increasing aspect ratio for the stamp patterns first results in distortion and discontinuity and then, the ripping of partial structures in the imprinted patterns.

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.1828087

Authors: Sunggook Park, Helmut Schift, Harun H. Solak, Jens Gobrecht

Institution: Paul Scherrer Institute

Language: English

Topic: Nanofabrication and Lithography Techniques

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Paul Scherrer Institut

OpenAlex ID: W2007844466

FWCI: 1.034

Cites: 13

Cited by: 22

Related to: 10