Year: 2013
Type: article
Abstract: We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni double-layered structure has shown a graphene-like back-gate bias dependence. In other words, the electrical properties of graphene are not significantly affected by its contact with Ni. This unexpected result may be ascribed to resist residuals at the metal/graphene interface, which may reduce the interaction between graphene and metals. In a back-gate device fabricated using the conventional lithography technique with an organic resist, the carrier density modulation in the graphene underneath the metal electrodes should be considered when discussing the metal/graphene contact.
Source: Journal of Applied Physics
DOI: 10.1063/1.4813216
Authors: T. Moriyama, K. Nagashio, T. Nishimura, A. Toriumi
Institution: The University of Tokyo
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2008176873