Interstitial charge states in boron-implanted silicon
Year: 2005
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1829787
Institution: University of Illinois Urbana-Champaign
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Foundation
OpenAlex ID: W2008577655