Year: 2013
Type: article
Abstract: Since self-cooling devices were first proposed, several materials have been tested for their suitability to be used in them. A self-cooling device requires a high Seebeck coefficient, a low electrical resistivity, and a high thermal conductivity. Here, we report experimental results for single-crystal silicon doped with boron. Samples were fabricated with carrier densities in the range of 2.0×1015 to 1.6×1019 cm-3, and their Seebeck coefficient and electrical resistivity were measured. Silicon with a carrier density of 1.6×1019 cm-3 has a power factor of 4.8×10-3 W/(K2·m) at room temperature. The cooling capability of a self-cooling device was estimated using a one-dimensional model. The results suggest that a self-cooling device based on silicon with a high carrier density can have a higher heat removal performance than a conventional silicon power device of the same size.
Institutions: Chubu University, Sony (Japan)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Funders: Chubu University, Shimane University
OpenAlex ID: W2008833325