Electrical transport properties of SnBi4Te7and PbBi4Te7with different deviations from stoichiometry
Year: 2001
Type: article
Abstract: Polycrystalline samples of SnBi 4 Te 7 and PbBi 4 Te 7 with deviations from stoichiometry in different sublattices were synthesized by melting and quenching followed by prolonged annealing and hot-pressing. At room temperature SnBi 4 Te 7 exhibits both n-type conductivity (Te deficiency and Sn or Bi excess) and p-type conductivity (Te excess and Sn or Bi deficiency) whereas only n-type conductivity samples were obtained for PbBi 4 Te 7 regardless of the type of deviation from stoichiometry. Both compounds possess high carrier concentrations in the range 4 × 10 19 -4 × 10 20 cm -3 and a relatively low carrier mobility of 35-70 cm 2 V -1 s -1 . The electrical resistivity and Seebeck coefficient have been measured over the temperature range 100-800 K on samples with different deviations from stoichiometry. The temperature dependence of the electrical transport properties of the compounds is typical of heavily-doped semiconductors. The potential for thermoelectric applications using these compounds is discussed.
Authors: V L Kuznetsov, L A Kuznetsova, D M Rowe
Institution: Cardiff University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2008945528