Preparation and study on the drift and hysteresis properties of the tin oxide gate ISFET by the sol–gel method
Year: 2002
Type: article
Source: Sensors and Actuators B Chemical
Authors: Jung Chuan Chou, Yii Fang Wang
Institution: National Yunlin University of Science and Technology
Language: English
Subfield: Analytical Chemistry
Field: Chemistry
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Council
OpenAlex ID: W2009437201
