Work

Effect of uniaxial stress on the polarization of light emitted from GaN∕AlN quantum dots grown on Si(111)

Year: 2008

Type: article

Source: Physical Review B

DOI: 10.1103/physrevb.77.155322

Authors: O. Moshe, D. H. Rich, B. Damilano, J. Massies

Institutions: Ben-Gurion University of the Negev, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: Latvian

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2009639702

FWCI: 2.087

Cites: 39

Cited by: 10

Related to: 10