Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET
Year: 2001
Type: article
Source: Microelectronic Engineering
Authors: Abhinav Kranti, S. Haldar, R.S. Gupta
Institution: University of Delhi
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2010332910