Work

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Year: 2004

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1819976

Authors: Minjoo L. Lee, Eugene A. Fitzgerald, Mayank T. Bulsara, Matthew T. Currie, Anthony Lochtefeld

Institutions: Massachusetts Institute of Technology, AmberWave (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011042741

FWCI: 40.48

Cites: 118

Cited by: 985

Related to: 9