Work

Kinetic Step Bunching Instability during Surface Growth

Year: 2005

Type: article

Abstract: We study the step bunching kinetic instability in a growing crystal surface characterized by anisotropic diffusion. The instability is due to the interplay between the elastic interactions and the alternation of step parameters. This instability is predicted to occur on a vicinal semiconductor surface Si(001) or Ge(001) during epitaxial growth. The maximal growth rate of the step bunching increases like F4, where F is the deposition flux. Our results are complemented with numerical simulations which reveal a coarsening behavior in the long time evolution for the nonlinear step dynamics.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.94.226102

Authors: Thomas Frisch, Alberto Verga

Institutions: Centre National de la Recherche Scientifique, Aix-Marseille Université, Institut de Recherche sur les Phénomènes Hors Équilibre, Université de Provence Aix-Marseille I

Language: English

Topic: Solidification and crystal growth phenomena

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2011120134

FWCI: 1.814

Cites: 22

Cited by: 28

Related to: 10