Work

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Year: 2012

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3696045

Authors: Hao Qiu, Lijia Pan, Zongni Yao, Junjie Li, Yi Shi, Xinran Wang

Institutions: Nanjing University, Chinese Academy of Sciences, Institute of Physics

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011189565

FWCI: 22.82

Cites: 27

Cited by: 589

Related to: 10