Work

Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy

Year: 2013

Type: article

Source: Micron

DOI: 10.1016/j.micron.2013.11.003

Authors: J.H. Lee, B.H. Lee, Y.T. Kim, J.J. Kim, S.Y. Lee, K.P. Lee, C.G. Park

Institutions: Pohang University of Science and Technology, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Advanced Materials Characterization Techniques

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Samsung

OpenAlex ID: W2011875977

FWCI: 1.953

Cites: 25

Cited by: 27

Related to: 10