Band gap energy modifications observed in trivalent In substituted nanocrystalline SnO2
Year: 2007
Type: article
Abstract: The effect of In doping concentration on the optical band gap of nano-SnO2 is investigated as a function of calcination temperature. Changes in the band gap explain the room temperature H2 gas sensing of doped nano-SnO2. The band gap was found to be lower than those reported for SnO2 (3.6eV) from 2.55to3.43eV and may be explained by the presence of nonequilibrium oxygen vacancies in the oxide lattice and band bending effects at the nanoscale.
Source: Applied Physics Letters
DOI: 10.1063/1.2746407
Institution: University of Central Florida
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2012296579