Minority carrier lifetimes in ideal InGaSb/InAs superlattices
Year: 1992
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.108480
Authors: C. H. Grein, P. M. Young, H. Ehrenreich
Institution: Harvard University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2012445921
