Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
Year: 2007
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.2802586
Institution: University of Massachusetts Amherst
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2013195712