Work

Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/AlxGa1−xAs quantum wells

Year: 1996

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.588936

Authors: D. H. Rich, K. Rammohan, H. T. Lin, Y. Tang, M. Meshkinpour, M. S. Goorsky

Institutions: University of Southern California, University of California, Los Angeles

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, National Defense Science and Engineering Graduate, Army Research Office

OpenAlex ID: W2013228562

FWCI: 0.48

Cites: 1

Cited by: 2

Related to: 10