Year: 2009
Type: conference-paper
Abstract: This work presents the growth of b SiC on silicon by VPE performed in a home built, horizontal, cold wall reactor. Test structures used to assess the stresses in the film were obtained either by an etch through the wafer from the bottom side of the wafer to produce membranes or an attack from the front to reveal cantilevers. Membranes and cantilevers presented both compressive and tensile strain, depending on film thickness. Raman spectroscopy was used to study strain and defects.
Source: ECS Transactions
DOI: 10.1149/1.3207702
Institutions: National Research Council, Universidad de Valladolid
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2014041385