Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO
Year: 2003
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1598624
Authors: Hiromichi Ohta, Masahiro Hirano, Ken Nakahara, Hideaki Maruta, Tetsuhiro Tanabe, Masao Kamiya, Toshio Kamiya, Hideo Hosono
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2014726933
