Work

Case study of SRAM threshold voltage shift caused by doping defects

Year: 2014

Type: conference-paper

Source: IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI: 10.1109/icsict.2014.7021482

Authors: May Yang, JH Lee, Smith Gao, Mark Zhang, Gary Zhao, Kary Chien

Institution: Semiconductor Manufacturing International (China)

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2014792707

FWCI:

Cites: 1

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Related to: 10