Work

Making silicon nitride film a viable gate dielectric

Year: 1998

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.661229

Author: T.P. Ma

Institution: Yale University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Yale University

OpenAlex ID: W2015742340

FWCI: 40.51

Cites: 35

Cited by: 384

Related to: 10