Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
Work
Year: 1997
Type: article
Source: Applied Physics Letters
Institution The University of Tokyo
Cites: 13
Cited by: 81
Related to: 10
FWCI: 5.156
Citation percentile (by year/subfield): 96.98
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed