Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature
Year: 2002
Type: article
Abstract: We have measured the room-temperature modulation characteristics of self-organized In0.4Ga0.6As/GaAs quantum dot lasers in which electrons are injected into the dot lasing states by tunneling. A small-signal modulation bandwidth of f−3 dB=22 GHz is measured. Values of differential gain at 288 K of dg/dn≅8.85×10−14 cm2 and gain compression factor ε=7.2×10−16 cm3 are derived from the modulation data. Extremely low values of linewidth enhancement factor α∼1 and chirp <0.6 Å were also measured in the devices.
Source: Applied Physics Letters
DOI: 10.1063/1.1514823
Authors: S. Ghosh, S. Pradhan, P. Bhattacharya
Institution: University of Michigan
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2016367399