Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
Year: 2001
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1418452
Institution: United States Naval Research Laboratory
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016425570