The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering
Work
Year: 1989
Type: article
Source: Journal of Applied Physics
Institutions University of Reading, Philips (United Kingdom), Worcestershire Royal Hospital, Fraunhofer Institute for Applied Solid State Physics
Cites: 30
Cited by: 153
Related to: 10
FWCI: 5.005
Citation percentile (by year/subfield): 97.19
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Sustainable Development Goal Affordable and clean energy
Open Access status: closed