Work

Summary Abstract: Correlation between Schottky barrier height and phase stoichiometry/structure of silicide–silicon interfaces

Year: 1982

Type: article

Source: Journal of Vacuum Science and Technology

DOI: 10.1116/1.571629

Authors: P. E. Schmid, P. S. Ho, T. Y. Tan

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016729640

FWCI: 4.72

Cites:

Cited by: 33

Related to: 10