ZnO-based one diode-one resistor device structure for crossbar memory applications
Year: 2012
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.3701722
Authors: Zi-Jheng Liu, Jon-Yiew Gan, Tri-Rung Yew
Institution: National Tsing Hua University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2017113842