Year: 2011
Type: article
Abstract: We investigate transport in locally gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zigzag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states in disordered graphene is also discussed.
Source: Physical Review Letters
Authors: J. R. Williams, C. M. Marcus
Institution: Harvard University
Language: Latvian
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2017399791