Year: 1994
Type: article
Abstract: Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. After an initial transient regime, indicated by reflection high-energy electron diffraction oscillations, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the growth mode can be termed generalized step flow.
Source: Applied Physics Letters
DOI: 10.1063/1.111137
Authors: M. D. Johnson, J. Sudijono, A. W. Hunt, B. G. Orr
Institution: University of Michigan
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2017401687