Year: 2007
Type: article
Abstract: An ideal switching effect is discovered in a semiconductor nanowire with a spatially periodic Rashba structure. Bistable ‘ON’ and ‘OFF’ states can be realized by tuning the gate voltage applied on the Rashba regions. The energy range and position of ‘OFF’ states can be manipulated effectively by varying the strength of the spin–orbit coupling (SOC) and the unit length of the periodic structure, respectively. The switching effect of the nanowire is found to be tolerant of small random fluctuations of SOC strength in the periodic structure. The ideal switching effect might be applicable in future nanoelectronic devices.
Institution: Fudan University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2017578968