Work

Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

Year: 2009

Type: article

Source: Science

DOI: 10.1126/science.1183226

Authors: John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing, Debdeep Jena

Institution: University of Notre Dame

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017584544

FWCI: 11.76

Cites: 18

Cited by: 844

Related to: 10