Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
Year: 1990
Type: article
Abstract: We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.
DOI: 10.1143/jjap.29.l205
Authors: Hiroshi Amano, Tsunemori Asahi, Isamu Akasaki
Institution: Nagoya University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2017643549