Work

Effect of annealing atmosphere on the electrical properties of nickel oxide/zinc oxide p–n junction grown by sol–gel technique

Year: 2014

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2014.05.008

Authors: M. Jlassi, I. Sta, M. Hajji, B. Ben Haoua, H. Ezzaouia

Institutions: Research and Technology Center of Energy, National School of Electronics and Telecommunications of Sfax, Tunisia, University of Eloued

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017719588

FWCI: 1.059

Cites: 29

Cited by: 37

Related to: 10