Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs
Work
Year: 1991
Type: article
Source: Journal of Applied Physics
Institutions NTT (Japan), University of Tsukuba
Cites: 22
Cited by: 131
Related to: 10
FWCI: 12.99
Citation percentile (by year/subfield): 98.37
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed