Low leakage of In0.83Ga0.17As photodiode with Al2O3/SiNx stacks
Work
Year: 2015
Type: article
Source: Infrared Physics & Technology
Institutions State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Fudan University, State Key Laboratory of ASIC and System +2 more
Cites: 17
Cited by: 14
Related to: 10
FWCI: 0.701
Citation percentile (by year/subfield): 66.31
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Sustainable Development Goal Clean water and sanitation
Open Access status: closed
Grant IDS 61204105, 61007067