Work

GaAs, AlAs, and Al x Ga1− x As: Material parameters for use in research and device applications

Year: 1985

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.336070

Author: Sadao Adachi

Institution: NTT (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018121995

FWCI: 49.84

Cites: 155

Cited by: 3,318

Related to: 10