Work

A RHEED and XPS study of InxGa1−xAs on GaAs grown by chemical beam epitaxy

Year: 1990

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(90)90366-s

Authors: A. Bensaoula, H. Hansen, H.C. Chen, J.T. Zborowski, K.D. Jamison, A. Ignatiev, H.D. Shih, Y.K. Tao

Institution: University of Houston

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018636211

FWCI: 0.224

Cites: 7

Cited by: 3

Related to: 10