Year: 2013
Type: conference-paper
Abstract: Strained Ge and GeSn are potentially direct bandgap Group IV materials suitable for photonic devices. We have grown both Ge and GeSn with controlled degrees of strain and GeSn/SiGeSn heterojunctions by low temperature MBE which demonstrate high quality and excellent optical properties, including stimulated emission. Gain calculations show that quantum wells of either strained Ge or GeSn that are direct bandgap provide gain comparable to III-V materials and will produce useful, low threshold lasers for on-chip optical communications
Source: ECS Transactions
Authors: James S Harris, Hai Lin, Robert Chen, Yijie Huo, Ed Fei, Seonghyun Paik, Seongjae Cho, Ted Kamins
Institution: Stanford University
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funder: National Science Foundation
OpenAlex ID: W2019074447