Work

Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to 1300°K

Year: 1964

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1713126

Authors: J. P. Dismukes, L. Ekstrom, E. F. Steigmeier, I. Kudman, D. S. Beers

Institution: RCA (United States)

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2019473624

FWCI: 4.251

Cites: 15

Cited by: 609

Related to: 10