New developer-soluble gap-fill material with fast plasma etch rate
Year: 2006
Type: conference-paper
DOI: 10.1117/12.656703
Authors: Anwei Qin, Daniel M. Sullivan, Runhui Huang
Institution: Brewer Science (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2019485437
